| 发明名称 |
III-V SEMICONDUCTOR MATERIAL BASED AC SWITCH |
| 摘要 |
A power circuit is described that includes a semiconductor die and a coupling structure. The semiconductor die includes a common substrate and a III-V semiconductor layer formed atop the common substrate. At least one bidirectional switch device is formed at least partially within the III-V semiconductor layer. The at least one bidirectional switch has at least a first load terminal and a second load terminal. The coupling structure is configured to dynamically couple the common substrate of the semiconductor die to a lowest potential out of a first potential of the first load terminal and a second potential of the second load terminal. |
| 申请公布号 |
US2016079233(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201414486260 |
申请日期 |
2014.09.15 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Deboy Gerald;Curatola Gilberto |
| 分类号 |
H01L27/06;H03K17/725;H01L29/872;H01L29/20;H01L29/778;H01L29/205 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power circuit comprising:
a semiconductor die that includes a common substrate and a III-V semiconductor layer formed atop the common substrate, wherein:
at least one bidirectional switch device is formed at least partially within the III-V semiconductor layer, andthe at least one bidirectional switch comprises at least a first load terminal and a second load terminal; and a coupling structure configured to dynamically couple the common substrate of the semiconductor die to a lowest potential out of a first potential of the first load terminal and a second potential of the second load terminal. |
| 地址 |
Villach AT |
