SELF ALIGNED REPLACEMENT FIN FORMATION

摘要

Methods and apparatus for forming FinFET structures are provided. Selective etching and deposition processes described herein may provide for FinFET manufacturing without the utilization of multiple patterning processes. Embodiments described herein also provide for fin material manufacturing methods for transitioning from silicon to III-V materials while maintaining acceptable crystal lattice orientations of the various materials utilized. Further embodiments provide etching apparatus which may be utilized to perform the methods described herein.

主权项

1. A method for forming a FinFET structure, comprising:
forming at least a first mandrel structure and a second mandrel structure having a first pitch size on a substrate, wherein the first mandrel structure and the second mandrel structure define a recess therebetween; conformally depositing a first fin material layer in the recess, wherein the first fin material layer extends continuously from the first mandrel structure to the second mandrel structure; removing the first mandrel structure and the second mandrel structure to form at least a first fin structure and a second fin structure having a second pitch size less than the first pitch size; and depositing a dielectric layer over the first fin material layer and the substrate.