发明名称 |
DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES |
摘要 |
The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer. |
申请公布号 |
EP2994933(A1) |
申请公布日期 |
2016.03.16 |
申请号 |
EP20140727142 |
申请日期 |
2014.05.01 |
申请人 |
SUNEDISON SEMICONDUCTOR LIMITED;KANSAS STATE UNIVERSITY RESEARCH FOUNDATION |
发明人 |
SEACRIST, MICHAEL R.;BERRY, VIKAS;NGUYEN, PHONG T. |
分类号 |
H01L21/314;C01B31/04 |
主分类号 |
H01L21/314 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|