发明名称 |
UNIPOLAR HETEROJUNCTION DEPLETION-LAYER TRANSISTOR |
摘要 |
A depletion-layer transistor comprising a base, an emitter and a collector, in which the emitter contains a tunnel diode which permits a tunnel current of charge carriers from the emitter in the direction of the collector when an emitter-base voltage above a first threshold voltage is applied in the direction of current flow, and in which the base contains a graphene layer. |
申请公布号 |
EP2380201(B1) |
申请公布日期 |
2016.03.16 |
申请号 |
EP20090768077 |
申请日期 |
2009.12.11 |
申请人 |
IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK |
发明人 |
MEHR, WOLFGANG;LIPPERT, GUNTHER |
分类号 |
H01L29/16;H01L29/737;H01L29/76 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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