ESD protection device and related fabrication methods

摘要

ESD protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base well region having a first conductivity type, a collector region of the opposite conductivity type, and a second base well region having a dopant concentration greater than the first base well region, and a portion of the second base well region is disposed between the first base well region and the collector region. A third base well region with a different dopant concentration is disposed between the collector region and the second base well region. At least a portion of the first base well region is disposed between a base contact region and an emitter region within the second base well region.

主权项

1. A semiconductor device having a protection circuit, the protection circuit comprising:
a first region of semiconductor material having a first conductivity type and a first dopant concentration; a second region of semiconductor material having a second conductivity type opposite the first conductivity type; a third region of semiconductor material having the first conductivity type and a second dopant concentration that is greater than the first dopant concentration, wherein at least a portion of the third region is disposed between the first region and the second region; a fourth region of semiconductor material having the first conductivity type and a third dopant concentration that is different from the second dopant concentration and different from the first dopant concentration, wherein at least a portion of the fourth region is disposed between the second region and the third region; a fifth region of semiconductor material having the first conductivity type; and a sixth region of semiconductor material within the third region, the sixth region having the second conductivity type, wherein at least a portion of the first region is disposed between the fifth region and the sixth region.