Solid state lighting devices with dielectric insulation and methods of manufacturing

摘要

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

主权项

1. A solid state lighting device, comprising:
a first semiconductor material; a second semiconductor material spaced apart from the first semiconductor material; an active region between the first and second semiconductor materials, the active region including at least one of an indium gallium nitride single quantum well, gallium nitride (GaN)/indium gallium nitride (InGaN) multiple quantum wells, and an InGaN bulk material; V-defect that defines sidewalls of an indentation extending between at least one of the first semiconductor material and the second semiconductor material, the first semiconductor material and the active region, and the active region and the second semiconductor material, wherein the sidewalls are surrounded by at least one of the first semiconductor material, the second semiconductor material, and the active region; a conductive material inside the indentation and in contact with the second semiconductor material, wherein the conductive material is different than the first and second semiconductor materials; and an insulating material in the indentation and electrically insulating at least a portion of the first semiconductor material from the conductive material.