| 发明名称 | Devices, systems, and methods for ion trapping | ||
| 摘要 | Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV. | ||
| 申请公布号 | US9287348(B1) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201514686576 | 申请日期 | 2015.04.14 |
| 申请人 | Honeywell International Inc. | 发明人 | Youngner Daniel |
| 分类号 | H01L23/04;H01L49/02;H01L23/48 | 主分类号 | H01L23/04 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A device for ion trapping, comprising: a through-silicon via (TSV); and a trench capacitor formed around the TSV and wherein the trench capacitor includes a plurality of annular rings, and wherein each of the plurality of rings is a different distance from the TSV. | ||
| 地址 | Morristown NJ US | ||