发明名称 絶縁層付フレキシブル金属基板およびその製造方法並びに半導体素子
摘要 [Problem] To enable a metal substrate with an insulating layer to maintain good strength and insulation characteristics for a flexible substrate even if the metal substrate has been subjected to a high temperature history of 550°C or higher. [Solution] A metal substrate (10) with an insulating layer, which comprises a steel base (11) and an Al layer (12) that is provided on at least one surface of the steel base (11), and wherein an anodic oxide film (13) having a porous structure is formed, as an electrically insulating layer, on the Al layer (12). The steel base (11) is configured to contain 0.0025-0.02% by mass of N.
申请公布号 JP5883663(B2) 申请公布日期 2016.03.15
申请号 JP20120014063 申请日期 2012.01.26
申请人 富士フイルム株式会社 发明人 佐藤 圭吾;垣内 良蔵;祐谷 重徳
分类号 C25D11/04;C23C2/12;H01L31/0392 主分类号 C25D11/04
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