发明名称 |
Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etch |
摘要 |
A method for detecting contamination on a patterned substrate includes: performing a via etch operation on a substrate, wherein the via etch operation is configured to define a via feature on the substrate and expose an etch-stop layer at a bottom of the via feature; performing an etch-stop removal operation on the substrate, wherein the etch-stop removal operation is configured for removing the etch-stop layer at the bottom of the via feature to expose a metallic feature underlying the etch-stop layer; applying an electroless deposition solution to the substrate, the applied electroless deposition solution configured for selectively depositing a metallic material over the exposed metallic feature and on metallic contaminants on exposed surfaces of the substrate, the metallic contaminants being generated from the metallic feature during the etch-stop removal operation; performing an inspection operation on the substrate to identify the metallic contaminants that have been deposited with the metallic material. |
申请公布号 |
US9287183(B1) |
申请公布日期 |
2016.03.15 |
申请号 |
US201514675350 |
申请日期 |
2015.03.31 |
申请人 |
Lam Research Corporation |
发明人 |
Zhao Larry;Kolics Artur;Nalla Praveen |
分类号 |
H01L21/66;H01L21/02;H01L21/768 |
主分类号 |
H01L21/66 |
代理机构 |
Martine Penilla Group, LLP |
代理人 |
Martine Penilla Group, LLP |
主权项 |
1. A method for detecting contamination on a patterned substrate, comprising:
performing a via etch operation on a substrate, wherein the via etch operation is configured to define a via feature on the substrate and expose an etch-stop layer at a bottom of the via feature; performing an etch-stop removal operation on the substrate, wherein the etch-stop removal operation is configured for removing the etch-stop layer at the bottom of the via feature to expose a metallic feature underlying the etch-stop layer; applying an electroless deposition solution to the substrate, the applied electroless deposition solution being configured for selectively depositing a metallic material over the exposed metallic feature and on metallic contaminants on exposed surfaces of the substrate, the metallic contaminants being generated from the metallic feature during the etch-stop removal operation; performing an inspection operation on the substrate to identify the metallic contaminants that have been deposited with the metallic material. |
地址 |
Fremont CA US |