| 发明名称 | Semiconductor fabricating device and method for driving the same, and method for fabricating magnetic tunnel junction using the same | ||
| 摘要 | In a method for fabricating a magnetic tunnel junction, a first magnetic layer is formed on a substrate, and a tunnel insulating layer is formed on the first magnetic layer. Subsequently, a second magnetic layer is formed on the tunnel insulating layer. In the method, the first magnetic layer is formed by periodically sputtering a magnetic target while a metal target is continuously sputtered. | ||
| 申请公布号 | US9287496(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201314052213 | 申请日期 | 2013.10.11 |
| 申请人 | SK Hynix Inc. | 发明人 | Choi Won Joon |
| 分类号 | H01L21/00;H01L43/12;C23C14/16;C23C14/54 | 主分类号 | H01L21/00 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a magnetic tunnel junction, comprising: forming a first magnetic layer on a substrate; forming a tunnel insulating layer on the first magnetic layer; and forming a second magnetic layer on the tunnel insulating layer, wherein the first magnetic layer is formed by periodically sputtering a magnetic target on the substrate during a period while continuously sputtering a metal target on the substrate during the period. | ||
| 地址 | Gyeonggi-do KR | ||