| 摘要 |
Crystalline silicon block (1) comprising a bottom part and defining a vertical direction, comprises several silicon grains (12) growing in the vertical direction (V), and a nucleation promotion layer (2) at the bottom part, where the silicon grains adjacent to nucleation promotion layer, exhibit an average grain size of less than 10 mm. An independent claim is also included for a silicon wafer comprising several silicon particles. |
