Silicon-germanium light-emitting element

摘要

Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.

主权项

1. A light-emitting element comprising:
an insulating layer provided on a semiconductor substrate; a first electrode for implanting electrons and a second electrode for implanting holes, the first and second electrodes being provided on the insulating layer; and a light-emitting portion electrically connected to the first and second electrodes and composed of a thin film extending in parallel with a surface of the semiconductor substrate on the insulating layer, wherein the thin film is composed of either a silicon crystal or a germanium crystal and has such a film thickness that light is emitted by implantation of the electrons and holes, wherein the thin film includes two regions in which holes are disposed at a predetermined interval in a longitudinal direction in vicinities of the first and second electrodes, respectively, and wherein a gap between adjacent holes of the two regions in which holes are disposed is equal to or less than 10 nm.