FinFET low resistivity contact formation method

摘要

The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate, and wherein a surface of the strained material has received a passivation treatment; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a dielectric layer coating the sidewalls and bottom of the opening, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; a metal barrier coating an opening of the dielectric layer; and a metal layer filling a coated opening of the dielectric layer.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a fin on a substrate; epitaxially growing a strained material in source/drain regions of the fin; forming an inter-layer dielectric (ILD) layer over the substrate; forming an opening in the ILD layer to expose the strained material; passivating exposed portions of the strained material to form a treated surface; forming a conductive dielectric layer over the treated surface; forming a barrier metal layer over the conductive dielectric layer; and forming a metallic contact plug over the barrier layer in the opening in the ILD layer.