发明名称 Surface emitting laser device and atomic oscillator
摘要 Disclosed is a surface emitting laser device, including a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, including an emitting region, laser light being emitted from the emitting region, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in the emitting region between the active layer and the upper reflecting mirror, a shape of the adjusting layer in a plane parallel to a surface of the substrate including shape anisotropy in two mutually perpendicular directions.
申请公布号 US9287682(B2) 申请公布日期 2016.03.15
申请号 US201314069541 申请日期 2013.11.01
申请人 RICOH COMPANY, LTD. 发明人 Motomura Hiroshi;Sato Shunichi
分类号 H01S5/183;H01S5/42;G04F5/14;H01S5/40 主分类号 H01S5/183
代理机构 Cooper & Dunham LLP 代理人 Cooper & Dunham LLP
主权项 1. A surface emitting laser device, comprising: a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; an adjusting layer formed of semiconductor, provided in an emitting region between the active layer and the upper reflecting mirror, laser light being emitted from the emitting region, wherein a shape of the adjusting layer in a plane parallel to a surface of the substrate has shape anisotropy in two mutually perpendicular directions; a spacer layer provided between the active layer and the upper reflecting mirror; a contact layer formed of semiconductor, provided between the spacer layer and the upper reflecting mirror; and an electrode connected to the contact layer, wherein the adjusting layer is provided between the contact layer and the upper reflecting mirror.
地址 Tokyo JP