发明名称 MEMORY DEVICE, AND MEMORY SYSTEM INCLUDING THE SAME
摘要 According to an embodiment of the present invention, a memory device includes: a precharge control block which receives an active command with respect to a first bank after receiving a precharge command with respect to the first bank, determines whether a precharge operation of the first bank has finished when the active command is received, and generates an active command signal based on a result of determination; an active control block which generates an active control signal with respect to the first bank according to the active command signal; and a driver block which controls an active operation of the first bank according to the active control signal. The present invention is to provide the memory device, capable of extending time for writing cell data, and a memory system including the same.
申请公布号 KR20160029290(A) 申请公布日期 2016.03.15
申请号 KR20140118536 申请日期 2014.09.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, TAE YOON;KIM, MYEONG O;SOHN, KYO MIN;HWANG, SANG JOON
分类号 G11C11/4063;G11C11/409 主分类号 G11C11/4063
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