| 摘要 |
A single crystal substrate (11) made of silicon carbide and a first support substrate (31) having a size greater than a size of each of the single crystal substrates (11) are prepared. The single crystal substrate (11) is bonded onto the first support substrate (31). Process on the single crystal substrate (11) bonded to the first support substrate (31) is performed. The first support substrate (31) is removed. The single crystal substrate (11) is subjected to heat treatment. The single crystal substrate (11) is bonded onto a second support substrate (32) having a size greater than the size of the single crystal substrate (11). Process on the single crystal substrate (11) bonded to the second support substrate (32) is performed. |
