Method of forming multilayer graphene structure

摘要

According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.

主权项

1. A method of forming a multilayer graphene structure, the method comprising:
forming a sacrificial layer including a plurality of hexagonal boron nitride (h-BN) films on a growth substrate; growing a first epitaxial graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, the growing the first epitaxial graphene layer including removing an uppermost part of the h-BN films to leave remaining h-BN films; forming a second epitaxial graphene layer on an upper surface of the remaining h-BN films using the CVD method, and removing an uppermost part of the remaining h-BN films under the first graphene layer during the forming the second graphene layer using the CVD method; and forming a third epitaxial graphene layer by epitaxially growing the third epitaxial graphene layer on the remaining h-BN films, wherein a lower surface of the second epitaxial graphene layer is on the third epitaxial graphene layer.