发明名称 RESIST COMPOSITION AND PATTERNING PROCESS
摘要 The present invention provides a resist composition containing, as constituent components, in addition to a repeat unit represented by general formula (1), at least one of repeat units represented by general formula (2A), (2B), or (2C), and/or a photoacid generator represented by general formula (4). R^1, R^2, and R^3 are an alkyl group; R^4 is a hydrogen atom or a methyl group; and R^5 is an alkyl group. X^1 is an alkylene group or an arylene group. k^1 is 0 or 1. q is 1 or 2. A is a hydrogen atom or a trifluoromethyl group. R^101, R^102, and R^103 are independently a hydrogen atom or a monovalent hydrocarbon group. m and n are an integer of 0-5; and p is an integer of 0-4. L is a single bond, an oxygen atom, or a divalent hydrocarbon group. The resist composition of the present invention can obtain a high dissolution contrast in the organic solvent development, and can improve the resist performance of MEF, CDU, or the like. Especially, the resist composition allows the formation of fine hole patterns with high circularity and favorable dimensional control.
申请公布号 KR20160028987(A) 申请公布日期 2016.03.14
申请号 KR20150125050 申请日期 2015.09.03
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 FUJIWARA TAKAYUKI;SAGEHASHI MASAYOSHI;HASEGAWA KOJI;OIKAWA KENICHI
分类号 G03F7/038;G03F7/004 主分类号 G03F7/038
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