| 发明名称 |
MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, an electrode provided on the substrate, a first insulating film surrounding a side surface of the electrode. The first insulating film contains oxygen. The magnetic memory further includes a second insulating film provided between the electrode and the first insulating film, and surrounding the side surface of the electrode. The second insulating film contains nitrogen. A magnetoresistance effect element is provided on the electrode. |
| 申请公布号 |
US2016072048(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514630398 |
申请日期 |
2015.02.24 |
| 申请人 |
ITO Yuichi |
发明人 |
ITO Yuichi |
| 分类号 |
H01L43/08;H01L43/12;H01L43/02 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory comprising:
a substrate; an electrode provided on the substrate; a first insulating film surrounding a side surface of the electrode, the first insulating film containing oxygen; a second insulating film provided between the electrode and the first insulating film, and surrounding the side surface of the electrode, the second insulating film containing nitrogen; and a magnetoresistance effect element provided on the electrode. |
| 地址 |
Seongnam-si KR |
