发明名称 |
METHODS FOR MEASURING OVERLAYS |
摘要 |
A method for measuring overlay includes receiving a first image of a first overlay mark captured using light having a first wavelength. The method includes receiving a second image of a second overlay mark captured using light having a second wavelength different from the first wavelength. The method includes measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels. |
申请公布号 |
US2016071255(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514940880 |
申请日期 |
2015.11.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JEONGJIN;Hwang Chan;Lee Seungyoon |
分类号 |
G06T7/00;H04N5/33;H04N5/225 |
主分类号 |
G06T7/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for measuring overlay, the method comprising:
receiving a first image of a first overlay mark selectively captured using light having a first wavelength in a first step; receiving a second image of a second overlay mark selectively captured using light having a second wavelength different from the first wavelength in a second step different from the first step; and measuring a displacement between a central portion of the first image and a central portion of the second image, wherein the first and second overlay marks are disposed on different levels, wherein:
the first overlay mark comprises a plurality of first zones comprising a first pattern disposed along an x direction, a second pattern disposed along a y direction, a third pattern disposed along the x direction and a fourth pattern disposed along the y direction, wherein the first through fourth patterns are rotationally symmetric around a center of the first overlay mark, andthe second overlay mark comprises a plurality of second zones comprising a fifth pattern disposed along an x direction, a sixth pattern disposed along a y direction, a seventh pattern disposed along the x direction and an eighth pattern disposed along the y direction, wherein the fifth through eighth patterns are rotationally symmetric around a center of the second overlay mark. |
地址 |
Suwon-si KR |