| 摘要 |
A manufacturing method and structure of an oxide semiconductor TFT substrate. An oxide conductor layer is used to define a channel (51) and a source (5) of the oxide semiconductor TFT substrate, and since the oxide conductor layer is relatively thin, in comparison with the prior art, the width of the channel (51) may be made smaller, and the width of the channel (51) may be accurately controlled. Therefore, the difficulty of the manufacturing process of the oxide semiconductor TFT substrate is reduced, the performance of the oxide semiconductor TFT substrate is improved, and the production yield is increased. In the structure of the oxide semiconductor TFT substrate, since the oxide conductor layer is similar to an oxide semiconductor layer (6) in terms of structural composition, a good ohmic contact may be formed. The oxide semiconductor layer (6) has a good slope, the oxide conductor layer does not cause metal ion pollution with regard to the oxide semiconductor layer (6), and since the oxide conductor layer is transparent, the aperture ratio may be increased. |
