3D SEMICIRCULAR VERTICAL NAND STRING WITH SELF ALIGNED FLOATING GATE OR CHARGE TRAP CELL MEMORY CELLS AND METHODS OF FABRICATING AND OPERATING THE SAME

摘要

A memory device includes a plurality of memory cells arranged in a string substantially perpendicular to the major surface of the substrate in a plurality of device levels, at least one first select gate electrode located between the major surface of the substrate and the plurality of memory cells, at least one second select gate electrode located above the plurality of memory cells, a semiconductor channel having a portion that extends vertically along a direction perpendicular to the major surface, a first memory film contacting a first side of the semiconductor channel, and a second memory film contacting a second side of the semiconductor channel. The second memory film is electrically isolated from the first memory film, and is located at a same level as the first memory film.

主权项

1. A memory device, comprising:
a substrate having a major surface; a plurality of memory cells arranged in a string extending in a first direction substantially perpendicular to the major surface of the substrate in a plurality of device levels, wherein each of the plurality of memory cells is positioned in a respective one of the plurality of device levels above the substrate; at least one first select gate electrode located between the major surface of the substrate and the plurality of memory cells; at least one second select gate electrode located above the plurality of memory cells; a semiconductor channel having a portion that extends vertically along a direction perpendicular to the major surface; a first charge storage element located on a first side of the semiconductor channel; and a second charge storage element located on a second side of the semiconductor channel and located at a same level as the first charge storage element, wherein the second charge storage element is electrically isolated from the first charge storage element, and located at a same level as the first charge storage element.