| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP AND CIRCUIT BOARD AND ELECTRONIC APPARATUS INCLUDING SEMICONDUCTOR CHIP |
| 摘要 |
A method for manufacturing a semiconductor chip includes forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region; forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region; and dividing the substrate along the cutting region by applying stress to the substrate. |
| 申请公布号 |
US2016071767(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514817924 |
申请日期 |
2015.08.04 |
| 申请人 |
FUJI XEROX CO., LTD. |
发明人 |
HASHIMOTO Takahiro;ONO Kenichi;MURATA Michiaki;IKOMA Hideyuki;OTSUKA Tsutomu |
| 分类号 |
H01L21/78;H01S5/02;H01L21/3065;H01L33/00;H01L21/268;H01L23/544 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor chip comprising:
forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region; forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region; and dividing the substrate along the cutting region by applying stress to the substrate. |
| 地址 |
Tokyo JP |
