| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS |
| 摘要 |
A method of manufacturing a semiconductor device includes processing a plurality of substrates each provided with an etch target by using a chemical liquid, the chemical liquid used repeatedly and being mixed with water for adjustment of an etch rate. |
| 申请公布号 |
US2016071738(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514679324 |
申请日期 |
2015.04.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Iimori Hiroyasu;Ogata Takehiro;Sugita Tomohiko |
| 分类号 |
H01L21/311;H01L21/67;H01L21/306 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device comprising:
processing a plurality of substrates each provided with an etch target by using a chemical liquid, the chemical liquid used repeatedly and being mixed with water for adjustment of an etch rate. |
| 地址 |
Minato-ku JP |
