| 摘要 |
PROBLEM TO BE SOLVED: To prevent electrostatic destruction in a corner of a chip.SOLUTION: A semiconductor device comprises: a P-type silicon substrate 31 having an edge EG1 which extends in an X direction and edges EG3, EG4 which extend in a Y direction; an external terminal 15 arranged in the X direction along the edge EG1; an N-type well region 22B provided on the silicon substrate 31 at a position which overlaps a part of the external terminal 15 in plan view; and an electrostatic protection element 60 disposed between the edges EG3, EG4 and the well region 22B for discharging charge accumulated in the well region 22B to the silicon substrate 31. According to the present embodiment, electrostatic destruction due to the charge accumulated in the well region can be prevented.SELECTED DRAWING: Figure 12 |
