发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To easily obtain multilevel data stored in a memory element (DRAM).SOLUTION: Control is performed of the amount of charge accumulated in a capacitor of a memory element (DRAM) by changing the potential of a wiring (a bit line), which is used for writing data to the memory element, in a period in which a transistor included in the memory element is on. Therefore, multilevel data stored in the memory element can be obtained without a complex configuration of a semiconductor device including the memory element.SELECTED DRAWING: Figure 1
申请公布号 JP2016034032(A) 申请公布日期 2016.03.10
申请号 JP20150204259 申请日期 2015.10.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KAMATA KOICHIRO
分类号 H01L21/8242;G11C11/56;H01L27/105;H01L27/108;H01L29/786 主分类号 H01L21/8242
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