| 主权项 |
1. A substrate processing apparatus comprising:
a susceptor configured to receive a substrate on a substrate receiving surface of the susceptor; a cartridge head disposed at the upper side of the susceptor, including a ceiling part; a plurality of gas distribution assemblies comprising:
a process gas distribution assembly including a rectangular through-hole for supplying a process gas to the substrate to be received from an upper side of the susceptor, the length in the longitudinal direction of the through-hole is longer than or equal with the diameter of the substrate to be received, the process gas distribution assembly including a projecting part extending outwardly from the through-hole, wherein the process gas distribution assembly is suspended from the ceiling part of the cartridge head and the rectangular through-hole extends toward the susceptor from an outer edge of the ceiling part through the ceiling part and through the projecting part of the process gas distribution assembly;an inert gas distribution assembly, arranged adjacent to the process gas distribution assembly, the inert gas distribution assembly including a rectangular through-hole for supplying an inert gas to the substrate to be received on the substrate receiving surface from an upper side of the susceptor, the length in the longitudinal direction of the through-hole is longer than or equal with the diameter of the substrate to be received on the substrate receiving surface, the inert gas distribution assembly including a projecting part extending outwardly from the through-hole, wherein the inert gas distribution assembly is suspended from the ceiling part of the cartridge head and the rectangular through-hole extends toward the susceptor from an outer edge of the ceiling part through the ceiling part and through the projecting part of the inert gas distribution assembly; andat least one of: (i) an additional process gas distribution assembly adjacent to the inert gas distribution assembly opposite the process gas distribution assembly; and (ii) an additional inert gas distribution assembly adjacent to the process gas distribution assembly opposite the inert gas distribution assembly; and a gas exhausting system including a gas exhausting aperture defined between the gas distribution assemblies adjacent to each other, the gas exhausting system including an exhausting buffer, partly defined by the upper walls of the projecting parts, the ceiling part and side walls of the gas distribution assemblies adjacent to each other, wherein the gas exhausting system is configured to exhaust a gas being in the domain sandwiched between the bottom surface of projecting part and the corresponding region of susceptor, through the corresponding exhausting buffer via the gas exhausting aperture. |
