EMBEDDED TUNGSTEN RESISTOR

摘要

A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer.

主权项

1. A method for fabricating an integrated circuit, comprising:
forming a lead with a lead length on a semiconductor wafer; forming dielectric sidewalls on the lead; depositing a dielectric layer over the lead; forming a photoresist pattern on the dielectric layer with a resistor trench opening adjacent to the lead; etching the dielectric layer through the resistor trench opening to form a resistor trench; filling the resistor trench with tungsten; and planarizing the tungsten to form a tungsten resistor having a resistor length equal to or less than the lead length of the lead.