SINGLE DAMASCENE INTERCONNECT STRUCTURE

摘要

A single damascene interconnect structure which includes a first layer that includes a first dielectric material having a first filled opening that has a barrier layer of a refractory material with Cu filling the first filled opening. Also included is a second layer of a second dielectric material having a second filled opening that has a sidewall layer which includes a compound of a metal, O, and Si such that the metal is Mn, Ti and Al, and with Cu filling the second filled opening. The compound is in direct contact with the second dielectric material. The first layer is adjacent to the second layer and the first filled opening is aligned with the second filled opening so that the first filled opening is a via and the second filled opening is a trench.

主权项

1. A single damascene interconnect structure comprising:
a first layer comprising a first dielectric material having a first filled opening, the first filled opening having a sidewall refractory barrier layer and a bottom refractory barrier layer, the sidewall refractory barrier layer being in direct contact with the first dielectric material, with Cu filling a remainder of the first filled opening; a second layer comprising a second dielectric material having a second filled opening, the second opening having a sidewall layer comprising a compound of a metal, O and Si such that the metal is selected from the group consisting of Mn, Ti and Al, and Cu filling a remainder of the second filled opening, wherein the compound of the metal O and Si is in direct contact with the second dielectric material; the first layer adjacent to the second layer and the first filled opening being aligned with the second filled opening so that the first filled opening is a via and the second filled opening is a trench.