| 发明名称 |
SOLAR CELL MADE USING A BARRIER LAYER BETWEEN P-TYPE AND INTRINSIC LAYERS |
| 摘要 |
A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer. |
| 申请公布号 |
US2016071995(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514941023 |
申请日期 |
2015.11.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;BAY ZU PRECISION CO., LTD |
发明人 |
Chen Tze-Chiang;Hong Augustin J.;Huang Chien-Chih;Huang Yu-Wei;Kim Jeehwan;Sadana Devendra K.;Tseng Chih-Fu |
| 分类号 |
H01L31/075;H01L31/0224;H01L31/18 |
主分类号 |
H01L31/075 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a photovoltaic device, comprising:
forming a substantially undoped barrier layer on a p-type layer by exposing the p-type layer to an oxygen containing environment by removing the p-type layer from a processing chamber for less than about 20 minutes; forming an intrinsic layer on the substantially undoped barrier layer; and forming an n-type layer on the intrinsic layer. |
| 地址 |
ARMONK NY US |
