THIN FILM TRANSISTOR SUBSTRATE

摘要

A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor units disposed on the substrate and respectively comprising: an active layer disposed on the substrate and made of polysilicon; an insulating layer disposed on the active layer; and a source electrode and a drain electrode disposed on the insulating layer, wherein the insulating layer comprises a first region corresponding to the active layer and a second region corresponding to a region outside the active layer, and a roughness of the first region is larger than that of the second region.

主权项

1. A thin film transistor substrate, comprising:
a substrate; and plural thin film transistor units disposed on the substrate and respectively comprising:
an active layer disposed on the substrate and made of polysilicon;an insulating layer disposed on the active layer; anda source electrode and a drain electrode disposed on the insulating layer, wherein the insulating layer comprises a first region corresponding to the active layer and a second region corresponding to a region outside the active layer, and a roughness of the first region is greater than that of the second region, wherein the thin film transistor units further respectively comprise a metal layer disposed on the insulating layer and having plural first protrusions at a top surface of the metal layer, and wherein the metal layer has a first thickness, the first protrusions respectively have a first height which is a distance between a top end of the first protrusion and the top surface of the metal layer, and the first height of the first protrusion is 10% to 30% of the first thickness of the metal layer.