发明名称 |
SEMICONDUCTOR DEVICE WITH A PILLAR-SHAPED SEMICONDUCTOR LAYER |
摘要 |
A semiconductor device includes a pillar-shaped silicon layer including a first diffusion layer, a channel region, and a second diffusion layer formed in that order from the silicon substrate side, floating gates respectively disposed in two symmetrical directions so as to sandwich the pillar-shaped silicon layer, and a control gate line disposed in two symmetrical directions other than the two directions so as to sandwich the pillar-shaped silicon layer. A tunnel insulating film is formed between the pillar-shaped silicon layer and each of the floating gates. The control gate line is disposed so as to surround the floating gates and the pillar-shaped silicon layer with an inter-polysilicon insulating film interposed therebetween. |
申请公布号 |
US2016071862(A1) |
申请公布日期 |
2016.03.10 |
申请号 |
US201514944616 |
申请日期 |
2015.11.18 |
申请人 |
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. |
发明人 |
MASUOKA FUJIO;NAKAMURA HIROKI |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a pillar-shaped semiconductor layer; and floating gates arranged so as to sandwich a channel region of said pillar-shaped semiconductor layer. |
地址 |
SINGAPORE SG |