| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus of generating ECR plasma, capable of generating plasma of high density under a low pressure, and an apparatus of depositing a film by way of magnetron sputtering, capable of depositing a thin film of slight surface unevenness. <P>SOLUTION: The apparatus 4 of generating ECR plasma includes a rectangular wave guide 41 that transmits a microwave, a slot antenna 42 comprising a slot for the microwave to pass therethrough, a dielectric member 43 disposed to cover the slot, with its surface on the side of plasma generating area disposed parallel to the incidence direction of the microwave incident from the slot, a support panel 44 disposed on the back of the dielectric member 43, and a permanent magnet 45 disposed on the back of the support panel 44, thereby generating ECR plasma P1. The apparatus 1 of depositing a film by way of magnetic sputtering includes the apparatus 4 of generating ECR plasma, and forms a film by virtue of magnetron plasma P2 while radiating ECR plasma P1 onto a space between a substrate 20 and a target 30. <P>COPYRIGHT: (C)2013,JPO&INPIT |
