フラッシュメモリ技術およびＬＯＣＯＳ／ＳＴＩアイソレーションに関する、回路の窒化トンネル酸化物のための窒化バリア

摘要

A method of fabricating an improved flash memory device, having shallow trench isolation in the periphery region and LOCOS isolation in the core region is provided, by first creating the shallow trench isolation using a hard mask; then creating the LOCOS isolation; and subsequently etching to remove stringers. The flash memory is able to use shallow trench isolation to limit encroachment. The flash memory may also have a nitridated tunnel oxide layer. A hard mask is used to prevent nitride contamination of the gate oxide layer.