发明名称 |
ANTI-DIFFUSION LAYER AND PREPARATION METHOD, THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
An anti-diffusion layer, a preparation method thereof, a thin-film transistor (TFT), an array substrate and a display device are provided, involve the display device manufacturing field and can resolve problem that a high atmosphere temperature is need in process of preparing a tantalum dioxide anti-diffusion layer by PVD or CVD, which causes the gate electrode to volatilize and affect the performance of a display device. The method for preparing the anti-diffusion layer comprises: placing a conductive base (1) and a cathode (4) in a tantalum sulfate solution (3), taking the conductive base (1) as an anode, and forming a tantalum dioxide anti-diffusion layer on the conductive base (1) after energizing. |
申请公布号 |
EP2993691(A1) |
申请公布日期 |
2016.03.09 |
申请号 |
EP20130836248 |
申请日期 |
2013.05.31 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
JIANG, CHUNSHENG;CHEN, HAIJING;WANG, DONGFANG |
分类号 |
H01L29/49;H01L21/336 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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