| 发明名称 | Photoelectric conversion element, method for manufacturingthe same, optical sensor, and solar cell | ||
| 摘要 | A photoelectric conversion element includes a PN junction formed between an N-type oxide layer and a P-type oxide layer, in which the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %. | ||
| 申请公布号 | US9281432(B2) | 申请公布日期 | 2016.03.08 |
| 申请号 | US201414557177 | 申请日期 | 2014.12.01 |
| 申请人 | Seiko Epson Corporation | 发明人 | Hamada Yasuaki |
| 分类号 | H01L31/072;H01L31/109;H01L31/032;H01L31/18;H01L31/036;H01L21/02 | 主分类号 | H01L31/072 |
| 代理机构 | Workman Nydegger | 代理人 | Workman Nydegger |
| 主权项 | 1. A photoelectric conversion element comprising: a PN junction formed between an N-type oxide layer and a P-type oxide layer, wherein the N-type oxide layer is formed of an oxide having a perovskite structure containing titanium and strontium, a part of strontium is substituted with a +3 valence metal element or a part of titanium is substituted with a +5 valence metal element, and the amount of the metal element substituted in the N-type oxide layer is 0.01 mass % to 0.75 mass %. | ||
| 地址 | Tokyo JP | ||