| 发明名称 | Integrated circuit resistor | ||
| 摘要 | A method of fabricating a semiconductor device is disclosed. The method includes providing a substrate including an isolation region, forming a resistor over the isolation region, and forming a contact over the resistor. The method also includes implanting with a dopant concentration that is step-increased at a depth of the resistor and that remains substantially constant as depth increases. | ||
| 申请公布号 | US9281356(B2) | 申请公布日期 | 2016.03.08 |
| 申请号 | US201414586013 | 申请日期 | 2014.12.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wong King-Yuen;Lin Chia-Pin;Lu Chia-Yu;Tsai Yi-Cheng;Lin Da-Wen;Yu Kuo-Feng |
| 分类号 | H01L49/02;H01L27/06;H01L29/8605;H01L21/265;H01L21/02;H01L21/8234;H01L29/66 | 主分类号 | H01L49/02 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of fabricating a semiconductor device, the method comprising: providing a substrate including an isolation region; forming a resistor over the isolation region; implanting the resistor, wherein the implanting the resistor includes: performing a pre-amorphous implant (PAI);thereafter, performing one of a deactivation implant and a carbon implant; andimplanting one of an n-type dopant and a p-type dopant; planarizing the implanted resistor; and forming a contact over the planarized resistor. | ||
| 地址 | Hsin-Chu TW | ||