Method for thermal-slide debonding of temporary bonded semiconductor wafers

摘要

A method for debonding two temporary bonded wafers, includes providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. Next, loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly. Next, driving the X-axis carriage drive and the bottom chuck assembly to the process zone under the top chuck assembly. Next, placing the unbonded surface of the carrier wafer in contact with the top chuck assembly and holding the carrier wafer by the top chuck assembly. Next, initiating horizontal motion of the X-axis carriage drive while heat is applied to the carrier wafer and while the carrier wafer is held by the top chuck assembly.

主权项

1. A method for debonding two via an adhesive layer temporary bonded wafers, comprising:
providing a debonder comprising a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly and an X-axis drive control configured to drive horizontally the X-axis carriage drive and the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone; loading a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer upon said bottom chuck assembly at the loading zone oriented so that an unbonded surface of the device wafer is in contact with the bottom assembly; driving said X-axis carriage drive and said bottom chuck assembly to the process zone under the top chuck assembly; placing an unbonded surface of the carrier wafer in contact with the top chuck assembly and holding said carrier wafer by said top chuck assembly; heating said carrier wafer with a heater comprised in said top chuck assembly to a temperature around or above said adhesive layer's melting point; initiating horizontal motion of said X-axis carriage drive along the X-axis by said X-axis drive control while heat is applied to said carrier wafer and while said carrier wafer is held by said top chuck assembly and said device wafer is held by said bottom chuck assembly and thereby causing the device wafer to separate and slide away from the carrier wafer; and wherein said bottom chuck assembly comprises a bottom chuck comprising a ceramic material and is designed to slide horizontally along the X-axis upon said X-axis carriage drive and to twist around the Z-axis.