发明名称 Semiconductor device and method of forming thermal interface material and heat spreader over semiconductor die
摘要 A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.
申请公布号 US9281228(B2) 申请公布日期 2016.03.08
申请号 US201113287035 申请日期 2011.11.01
申请人 STATS ChipPAC, Ltd. 发明人 Choi DaeSik;Yang JoungIn;Kim MinJung;Park Sang Mi;Yu MinWook
分类号 H01L21/00;H01L21/683;H01L23/36;H01L23/42;H01L29/06;H01L25/065;H01L23/00 主分类号 H01L21/00
代理机构 Patent Law Group: Atkins and Associates, P.C. 代理人 Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C.
主权项 1. A method of making a semiconductor device, comprising: providing a substrate; disposing a semiconductor die over the substrate; forming a recess over a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls of the recess on at least two sides of the semiconductor die; forming a thermal interface material in the recess; and disposing a heat spreader in the recess.
地址 Singapore SG