发明名称 半導体装置
摘要 PROBLEM TO BE SOLVED: To reduce heat resistance between an IC chip and a heat radiation pattern to improve a heat radiation effect even when an electrode of the IC chip and the heat radiation pattern cannot be conductively connected.SOLUTION: A semiconductor device comprises: a plurality of first lead-out wiring patterns (26) having one ends connected to a first bump electrode (111); a second lead-out wiring pattern (24) connected to a plurality of second bump electrodes (111 arranged on both sides of the plurality of first bump electrodes) so as to surround the plurality of first lead-out wiring pattern (26) in planar view. The second lead-out wiring pattern (24) includes a part which extends along an extension direction (first direction) of the plurality of first and second bump electrodes (111) and a plurality of second parts which extend from the first part toward the plurality of second bump electrodes. A width of the fist part in the first direction is larger than that of the second part. The other ends of the plurality of first lead-out wiring pattern (26) are terminated closer to the first part of the second lead-out wiring pattern (24) than the semiconductor chip (11).
申请公布号 JP5878611(B2) 申请公布日期 2016.03.08
申请号 JP20140238495 申请日期 2014.11.26
申请人 ルネサスエレクトロニクス株式会社 发明人 江川 秀範
分类号 H01L21/60;H01L23/12;H01L23/36 主分类号 H01L21/60
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