发明名称 Multicolored single crystal diamond gemstones and methods for forming the same
摘要 The disclosure relates to the inclusion of an image embedded in or on a single crystal diamond such that the image is part of the single crystal diamond structure. The disclosed methods use a combination of gemstone deposition processes and patterning processes to create single crystal gemstones with embedded color variations that can create externally visible two-dimensional or three-dimensional images in a seamless single crystal matrix without visible internal lines/interfacial boundaries. The image embedded image is differently colored from the surrounding diamond matrix. The color variation is accomplished by a change in the diamond growth conditions or treatment of the diamond.
申请公布号 US9277792(B2) 申请公布日期 2016.03.08
申请号 US201113215326 申请日期 2011.08.23
申请人 BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY 发明人 Grotjohn Timothy A.;Randall Carolyn
分类号 C30B25/04;A44C17/00;C30B25/10;C30B29/04;C30B33/00 主分类号 C30B25/04
代理机构 Marshall, Gerstein & Borun LLP 代理人 Marshall, Gerstein & Borun LLP
主权项 1. A method for forming a multicolored single crystal gemstone (SCG) structure, the method comprising: (a) providing a first SCG layer having (i) a growth surface and (ii) a first color; (b) removing a portion of the first SCG layer from the growth surface thereof, thereby forming a recess in the first SCG layer; (c) depositing a second SCG layer into the recess and onto the growth surface of the first SCG layer, the second SCG layer having a second color different from the first color; (d) removing a portion of the second SCG layer so that at least a portion of the second SCG layer remains in the recess as a patterned second SCG layer, thereby forming a multicolored SCG composite structure; (e) depositing a third SCG layer having a third color above the patterned second SCD layer, thereby enlarging the multicolored SCG composite structure; and (f) reshaping the multicolored SCG composite structure into a gemstone shape; wherein the first SCG layer, the second SCG layer, and the third SCG share the same single crystal structure, wherein depositing the second SCG layer and depositing the third SCG layer comprises performing single crystal homoepitaxial deposition of the second SCG layer and the third SCG layer.
地址 East Lansing MI US