| 摘要 |
Disclosed are a light emitting diode and a method for fabricating the same. The light emitting diode includes a light emitting structure which includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, a transparent layer which is located on the second conductivity type semiconductor layer, and an insulating layer which covers the light emitting structure and the transparent electrode layer. The insulating layer includes fine particles including at least two different oxides, and a void interposed between the fine particles. According to the present invention, a light emitting diode with light extraction efficiency can be provided. |
