Semiconductor devices and methods of fabricating the same

摘要

A semiconductor device includes a plurality of gate structures on a substrate, the plurality of gate structures including a gate metal pattern and delimiting air gaps formed therebetween, an insulating layer on the plurality of gate structures, and a porous insulating layer between the plurality of gate structures and the insulating layer, the porous insulating layer configured to cross the plurality of gate structures to delimit the air gaps.

主权项

1. A semiconductor device, comprising:
cell gate structures on a substrate, the cell gate structures having first air gaps therebetween; peripheral gate structures on the substrate, the peripheral structures having second air gaps therebetween; an insulating layer on the cell gate structures and the peripheral gate structures, the insulating layer configured to cover sidewalls of the peripheral gate structures and the second air gaps; and a porous insulating layer between the cell gate structures and the insulating layer, the porous insulating layer configured to cross the cell gate structures to delimit the first air gaps, wherein a bottom surface of a portion of the porous insulating layer delimiting the first air gaps is located below a portion of the insulating layer covering an upper portion of the second air gaps.