Transistor assisted ESD diode

摘要

An integrated circuit includes a diode/bipolar ESD protection device. The diode/bipolar ESD device includes at least one gate separated ESD diode and at least one gate spaced ESD bipolar transistor coupled in parallel between a fixed voltage and an input/output pin.

主权项

1. An integrated circuit, comprising:
a first nwell formed in a p-type substrate; a first pwell formed in said p-type substrate where a doping of said first pwell is higher than a doping of said p-type substrate; a gate dielectric formed on said p-type substrate said first nwell and said first pwell; an NMOS transistor with an NMOS transistor gate on said gate dielectric over said first pwell; a PMOS transistor with a PMOS transistor gate on said gate dielectric over said first nwell; and a diode/bipolar ESD device located in the p-type substrate outside of said first nwell and said first pwell further comprising: a gate spaced ESD diode with an ESD diode gate on said gate dielectric where said ESD diode gate separates a first doping type diffusion from a second doping type diffusion and where said first doping type diffusion is coupled to a fixed voltage and where said second doping type diffusion is coupled to an input/output pin of said integrated circuit; a gate spaced ESD bipolar transistor with an ESD bipolar gate on said gate dielectric where said ESD bipolar gate overlies a base of said ESD bipolar transistor with a second doping type and where said ESD bipolar gate separates an emitter diffusion of said ESD bipolar transistor with said first doping type from a collector diffusion of said ESD bipolar transistor with said first doping type; said gate spaced ESD diode and said gate spaced ESD bipolar transistor are coupled in parallel;
said emitter is coupled to said I/O pin;said base diffusion is coupled to said fixed voltage;said collector is coupled to said fixed voltage;said ESD diode gate is coupled to said fixed voltage;said ESD bipolar gate is coupled to said fixed voltage; and wherein a single continuous section of gate material forms both the ESD diode gate and the ESD bipolar gate.