Semiconductor device

摘要

A semiconductor device that is less influenced by variations in characteristics between transistors or variations in a load, and is efficient even for normally-on transistors is provided. The semiconductor device includes at least a transistor, two wirings, three switches, and two capacitors. A first switch controls conduction between a first wiring and each of a first electrode of a first capacitor and a first electrode of a second capacitor. A second electrode of the first capacitor is connected to a gate of the transistor. A second switch controls conduction between the gate and a second wiring. A second electrode of the second capacitor is connected to one of a source and a drain of the transistor. A third switch controls conduction between the one of the source and the drain and each of the first electrode of the first capacitor and the first electrode of the second capacitor.

主权项

1. A semiconductor device comprising:
a transistor comprising a gate electrode, a first terminal, and a second terminal; a first wiring; a second wiring; a first switch; a second switch; a third switch; a first capacitor; and a second capacitor, wherein the first switch has a function of selecting conduction or non-conduction between the first wiring and a first electrode of the first capacitor, wherein the first electrode of the first capacitor is electrically connected to a first electrode of the second capacitor, wherein a second electrode of the first capacitor is electrically connected to the gate electrode of the transistor, wherein a second electrode of the second capacitor is electrically connected to the first terminal of the transistor, wherein the second switch has a function of selecting conduction or non-conduction between the second wiring and the gate electrode of the transistor, and wherein the third switch has a function of selecting conduction or non-conduction between the first electrode of the first capacitor and the first terminal of the transistor.