发明名称 |
A RECESSED SALICIDE STRUCTURE TO INTEGRATE A FLASH MEMORY DEVICE WITH A HIGH κ METAL GATE LOGIC DEVICE |
摘要 |
Provide is an integrated circuit (IC) for an embedded flash memory device. The IC includes a flash memory cell having a memory cell gate. A silicide contact pad is arranged in a recess of the memory cell gate. A top surface of the silicide contact pad is recessed relative to a top surface of the memory cell gate. Dielectric side-wall spacers extend along sidewalls of the recess from the top surface of the memory cell gate to the top surface of the silicide contact pad. |
申请公布号 |
KR20160024724(A) |
申请公布日期 |
2016.03.07 |
申请号 |
KR20140186929 |
申请日期 |
2014.12.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHUANG HARRY HAK LAY;WU WEI CHENG;LIU SHIH CHANG;KAO YA CHEN |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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