发明名称 JUNCTION MATERIAL AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a junction material capable of further improving reliability after junction in a case of using a specific junction material, and a semiconductor device joined to a counterpart using the junction material.SOLUTION: A plate-like junction material 10 comprises: a Zn-based metallic material layer 1 mainly containing Zn; an Al-based metallic material layer 2 provided on the Zn-based metallic material layer 1 and mainly containing Al; and an X-based metallic material layer (Cu-based metallic material layer 3) provided on the Al-based metallic material layer 2 and mainly containing Cu, Au, Ag or Sn, the Zn-based metallic material layer 1 containing therein a metallic plate (invar mesh 4) formed of a metallic material having a coefficient of thermal expansion of not higher than 5 and including a plurality of through-holes.SELECTED DRAWING: Figure 1
申请公布号 JP2016030281(A) 申请公布日期 2016.03.07
申请号 JP20140153985 申请日期 2014.07.29
申请人 HITACHI METALS LTD 发明人 KUROKI KAZUMA;ODA YUICHI;KURODA HIROMITSU;SATO TAKUMI;TANAKA KOTARO;TSUJI TAKAYUKI
分类号 B23K35/14;H01L21/52 主分类号 B23K35/14
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