| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor wafer which is thin in its growth film thickness and superior in productivity, and which allows a light-emitting device having a satisfactory light-emitting property to be obtained.SOLUTION: A nitride semiconductor wafer comprises: a nitride semiconductor template having a nitride semiconductor layer as its uppermost layer: and a light-emitting layer of a multiple quantum well structure, which is composed of a re-grown nitride semiconductor and a p-type nitride semiconductor layer which are stacked on the nitride semiconductor template. When of well layers in the light-emitting layer of the multiple quantum well structure, the well layer closest to the p-type nitride semiconductor layer is referred to as "top well layer", the distance t from a re-growth interface of the nitride semiconductor layer of the nitride semiconductor template to the top well layer is 1 μm or less; the oxygen density in the top well layer is 5.0×10cmor less.SELECTED DRAWING: Figure 1 |
