发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of alleviating deformation of a semiconductor substrate on which a semiconductor element is formed, in a method of manufacturing a semiconductor device that performs element isolation by using a recessed part.SOLUTION: According to one embodiment, a method of manufacturing a semiconductor device includes the following steps of: forming a recessed part on a surface of a semiconductor layer; forming a buffer layer that has a melting point lower than that of the semiconductor layer, on a surface of the recessed part on the surface of the semiconductor layer; forming a high-melting point film having a melting point higher than that of the semiconductor layer, on the buffer layer to fill the recessed part; and heating the semiconductor layer on which the buffer layer and the high-melting point film are formed at a temperature equal to or more than the melting point of the buffer layer.SELECTED DRAWING: Figure 1
申请公布号 JP2016032001(A) 申请公布日期 2016.03.07
申请号 JP20140153264 申请日期 2014.07.28
申请人 TOSHIBA CORP 发明人 OKUSHIRO SHINTARO;YOSHINO KENICHI;FUKUMIZU HIROYUKI;KATO MASARU
分类号 H01L21/76;H01L21/02;H01L21/20;H01L21/265;H01L21/268;H01L27/146 主分类号 H01L21/76
代理机构 代理人
主权项
地址