| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching a tungsten containing layer.SOLUTION: An etch gas is provided comprising Oand a fluorine containing component. The etch gas has at least as many oxygen atoms as fluorine atoms. Plasma is formed from the etch gas. The tungsten containing layer (W layer) is etched with the plasma formed from the etch gas.SELECTED DRAWING: Figure 1 |
